Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

The IEEE allows authors and/or their companies the right to post their IEEE-copyrighted material on their own servers.

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. These works may not be reposted without the explicit permission of the copyright holder.

Before downloading please note:

Copyright 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

The following article appeared in IEEE Transactions on Electron Devices and may be found at L. J. J. Tan, Wai Mun Soong, J. P. R. David, Jo Shien Ng, Electron Devices, IEEE Transactions on, vol. 58, no. 1, pp 103-106, 2011.

The paper may be downloaded here.