Gate-drain avalanche breakdown in GaAs power MESFET's
The IEEE allows authors and/or their companies the right to post their IEEE-copyrighted material on their own servers.
This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights
therein are retained by authors or by other copyright holders. All persons copying this information are expected
to adhere to the terms and constraints invoked by each author's copyright. These works may not be
reposted without the explicit permission of the copyright holder.
Before downloading please note:
Copyright 1982 IEEE. Personal use of this material is permitted. However, permission
to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale
or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
The following article appeared in IEEE Transactions on Electron Devices and may be found at J.P.R. David et al., Electron Devices, IEEE Transactions on, vol. 29, no. 10, pp 1548-1552, 1982.
The paper may be downloaded here.