Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the B axis
The American Institute of Physics (AIP) grants to the author(s) of papers submitted to or published in Journal of Applied Physics the right to post and update the article on the authors' and employers' webpages.
Before downloading please note:
Copyright 1994 American Institute of Physics. This article may be downloaded for personal use only.
Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics and may be found at T. E. Sale et al., J. Appl. Phys., 76, 5447 (1994).
The paper may be downloaded here.