Impact Ionisation Group Journal Publications

Journal publications from 1985 to 2012 are listed below. Click the abstract link to view the publisher's abstract page. Where possible, we have also included a link to a PDF of the full paper. For other publications, please contact us if you would like a copy of a particular paper but do not have the appropriate journal subscription.

2013

Temperature dependence of impact ionization in InAs

  • Optics Express
  • Volume: 20, Issue 8, Pages: 8630-8637, Apr. 2013
  • Ian C. Sandall, Jo Shien Ng, Shiyu Xie, Pin Jern Ker, and Chee Hing Tan
  • abstract, full paper

Evaluation of phase sensitive detection method and Si avalanche photodiode for radiation thermometry

  • Journal of Instrumentation
  • Volume: 8, Issue: 3, Pages: P03016, 2013
  • M J Hobbs, C H Tan and J R Willmott
  • abstract

2012

Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes

  • Optics Express
  • Volume: 20, Issue 28, Pages: 29568-29568, Dec. 2012
  • Pin Jern Ker, John P. R. David, and Chee Hing Tan
  • abstract, full paper

Absorption Characteristics of GaAs1-xBixGaAs Diodes in the Near-infrared

  • Photonics Technology Letters, IEEE
  • Volume: 24, Issue 23, Pages: 2191-2194 , Oct. 2012
  • C. J. Hunter, F. Bastiman, A. Mohmad, R. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David
  • abstract, full paper

Stability in Small Signal Common Base Amplifiers

  • IEEE Transactions on Circuits and Systems I: Regular Papers
  • Volume: 60, Issue 4, Pages: 846-855, Aug. 2012
  • J. E. Green, R. C. Tozer, J. P. R. David
  • abstract, full paper

Effects of rapid thermal annealing on GaAs1-xBix alloys

  • Applied Physics Letters
  • Volume: 101, Issue 1, Pages: 012106012106-3, Jul. 2012.
  • A. R. Mohmad, F. Bastiman, C. J. Hunter, R. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David
  • abstract, full paper

1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon

  • Optics Express
  • Volume: 20, Issue 10, Pages: 10446-10452, May 2012
  • Ian Sandall, Jo Shien Ng, J. P. R. David, Chee Hing Tan, Ting Wang, Huiyun Liu
  • abstract, full paper

Planar InAs photodiodes fabricated using He ion implantation

  • Optics Express
  • Volume: 20, Issue 8, Pages: 8575-8583, Apr. 2012
  • Ian Sandall, Chee Hing Tan, Andrew Smith, and Russell Gwilliam
  • abstract, full paper

Excess Noise Characteristics of Thin AlAsSb APDs

  • IEEE Transactions on Electron Devices
  • Volume: 59, Issue 5, Pages: 14751479, Apr. 2012.
  • Jingjing Xie, Shiyu Xie, R. C. Tozer, Chee Hing Tan
  • abstract, full paper

Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement

  • IEEE Transactions on Electron Devices
  • Volume: 59, Issue 4, Pages: 10301036, Apr. 2012.
  • J. E. Green, W. S. Loh, A. R. J. Marshall, B. K. Ng, R. C. Tozer, J. P. R. David, S. I. Soloviev, P. M. Sandvik
  • abstract, full paper

Effects of Dead Space on Avalanche Gain Distribution of X-Ray Avalanche Photodiodes

  • IEEE Transactions on Electron Devices
  • Volume: 59, Issue 4, Pages: 10631067, Apr. 2012
  • R. B. Gomes, C. H. Tan, J. E. Lees, J. P. R. David, J. S. Ng
  • abstract, full paper

Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

  • IEEE Photonics Technology Letters
  • Volume: 24, Issue 3, Pages: 218220, Feb. 2012
  • K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, D. L. Huffaker
  • abstract, full paper

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

  • Journal of Crystal Growth
  • Volume: 338, Issue 1, Pages: 57-61, Jan. 2012
  • F. Bastiman, A. R. B. Mohmad, J. S. Ng, J. P. R. David, S. J. Sweeney
  • abstract

2011

High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes

  • Optics Letters
  • Volume: 36, Issue 21, Pages: 4287-4289, Nov. 2011
  • I. C. Sandall, Shiyu Xie, JingJing Xie, and Chee Hing Tan
  • abstract, full paper

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

  • Optics Express
  • Volume: 19, Issue 23, Pages: 23341-23349, Nov. 2011
  • Andrew R. J. Marshall, Pin Jern Ker, Andrey Krysa, John P. R. David, and Chee Hing Tan
  • abstract, full paper

Impact Ionization Coefficients in Al0.52In0.48P

  • Electron Device Letters, IEEE
  • Volume: 32, Issue 11, Pages: 15281530, Nov. 2011
  • J. S. L. Ong, J. S. Ng, A. B. Krysa, J. P. R. David
  • abstract, full paper

The spectral resolution of high temperature GaAs photon counting soft X-ray photodiodes

  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • Volume: 654, Issue 1, Pages: 336339, Oct. 2011
  • A. M. Barnett, J. E. Lees, D. J. Bassford, J. S. Ng, C. H. Tan, N. Babazadeh, R. B. Gomes
  • abstract

Temperature Dependence of Leakage Current in InAs Avalanche Photodiodes

  • Quantum Electronics, IEEE Journal of
  • Volume: 47, Issue: 8, Pages: 1123-1128, Jul. 2011
  • P. J. Ker, A. R. J. Marshall, A. B. Krysa, J. P. R. David, C. H. Tan
  • abstract, full paper

GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

  • Electron Device Letters, IEEE
  • Volume: 32, Issue: 7, Pages: 919-921, Jul. 2011
  • Siew Li Tan, Shiyong Zhang, Wai Mun Soong, Yu Ling Goh, L. J. J. Tan, Jo Shien Ng, J. P. R. David, I. P. Marko, A. R. Adams, S. J. Sweeney, J. Allam
  • abstract, full paper

Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

  • Quantum Electronics, IEEE Journal of
  • Volume: 47, Issue: 6, Pages: 858-864, Jun. 2011
  • A. R. J. Marshall, P. Vines, P. J. Ker, J. P. R. David, and Chee Hing Tan
  • abstract, full paper

Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors

  • Electron Devices, IEEE Transactions on
  • Volume: 58, Issue: 6, Pages: 1696-1701, Jun. 2011
  • Chee Hing Tan, R. B. Gomes, J. P. R. David, A. M. Barnett, D. J. Bassford, J. E. Lees, Jo Shien Ng
  • abstract, full paper

Implementation of an algorithmic spectrometer using Quantum Dot Infrared Photodetectors

  • Infrared Physics & Technology
  • Volume: 54, Issue: 3, Pages: 228232, May 2011
  • C. H. Tan, P. Vines, M. Hobbs, B. Anderson, M. Hugues, J. David
  • abstract

Noise, Gain, and Responsivity in Low-Strain Quantum Dot Infrared Photodetectors With up to 80 Dot-in-a-Well Periods

  • Quantum Electronics, IEEE Journal of
  • Volume: 47, Issue: 5, Pages: 607-613, May. 2011
  • P. Vines, C. H. Tan, J. P. R. David, R. S. Attaluri, T. E. Vandervelde, S. Krishna
  • abstract, full paper

Versatile Spectral Imaging With an Algorithm-Based Spectrometer Using Highly Tuneable Quantum Dot Infrared Photodetectors

  • Quantum Electronics, IEEE Journal of
  • Volume: 47, Issue: 2, Pages: 190-197, Feb. 2011
  • P. Vines, C. H. Tan, J. P. R. David, R. S. Attaluri, T. E. Vandervelde, S. Krishna, W. Jang, M. M. Hayat
  • abstract, full paper

InAlAs Avalanche Photodiode With Type-II Superlattice Absorber for Detection Beyond 2 m

  • Electron Devices, IEEE Transactions on
  • Volume: 58, Issue: 2, Pages: 486-489, Feb. 2011
  • D. S. G. Ong, Jo Shien Ng, Yu Ling Goh, Chee Hing Tan, Shiyong Zhang, J. P. R. David
  • abstract, full paper

Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

  • Electron Devices, IEEE Transactions on
  • Volume: 58, Issue: 1, Pages: 103-106, Jan. 2011
  • L. J. J. Tan, Wai Mun Soong, J. P. R. David, Jo Shien Ng
  • abstract, full paper

Photoluminescence investigation of high quality GaAs1-xBix on GaAs

  • Applied Physics Letters
  • Volume: 98, Issue: 12, Pages: 122107, 2011
  • A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, J. P. R. David
  • abstract, full paper

The effect of Bi composition to the optical quality of GaAs1-xBix

  • Applied Physics Letters
  • Volume: 99, Issue: 4, Pages: 042107, 2011
  • A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney, J. P. R. David
  • abstract, full paper

Dark current mechanisms in quantum dot laser structures

  • Journal of Applied Physics
  • Volume: 109, Issue: 11, Pages: 113111, 2011
  • N. F. Hasbullah, J. P. R. David, and D. J. Mowbray
  • abstract, full paper

2010

Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures

  • Quantum Electronics, IEEE Journal of
  • Volume: 46, Issue: 12, Pages: 1847-1853, 2010
  • N.F. Hasbullah, M. Hopkinson, R.R. Alexander, R.A. Hogg, J.P.R. David, T.J. Badcock, D.J. Mowbray
  • abstract, full paper

Impact Ionization in InAs Electron Avalanche Photodiodes

  • Electron Devices, IEEE Transactions on
  • Volume: 57, Issue: 10, Pages: 2631-2638, 2010
  • A.R.J. Marshall, J.P.R. David, Chee Hing Tan
  • abstract, full paper

Temperature dependence of AlGaAs soft X-ray detectors

  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • Volume: 621, Issue: 1-3, Pages: 453-455, 2010
  • A.M. Barnetta, D.J. Bassforda, J.E. Leesa, J.S. Ng, C.H. Tan, J.P.R. David
  • abstract

Nonlocal impact ionization and avalanche multiplication

  • Journal of Physics D: Applied Physics
  • Volume: 43, Issue: 24, Article: 243001, 2010
  • G. J. Rees and J. P. R. David
  • abstract

Temperature Dependence of Avalanche Breakdown in InP and InAlAs

  • Quantum Electronics, IEEE Journal of
  • Volume: 46, Issue: 8, Pages: 1153-1157, 2010
  • L. J. J. Tan, D. S. G. Ong, Jo Shien Ng, Chee Hing Tan, S. K. Jones, Yahong Qian, J. P. R. David
  • abstract, full paper

2009

Correlation between defect density and current leakage in InAs/GaAs quantum dot-in-well structures

  • Journal of Applied Physics
  • Volume: 16, Issue: 2, Pages: 024502-5, 2009
  • A. M. Sanchez, R. Beanland, N. F. Hasbullah, M. Hopkinson, J. P. R. David
  • abstract

Optimization of InP APDs for High-Speed Lightwave Systems

  • Lightwave Technology, Journal of
  • Volume: 27, Issue: 15, Pages: 3294-3302, 2009
  • D.S.G. Ong, Jo Shien Ng, M.M. Hayat, Peng Sun, J. David
  • abstract, full paper

Extremely Low Excess Noise in InAs Electron Avalanche Photodiodes

  • Photonics Technology Letters, IEEE
  • Volume: 21, Issue: 13, Pages: 866-868, 2009
  • A.R.J. Marshall, Chee Hing Tan, M.J. Steer, J.P.R. David
  • abstract, full paper

A Theoretical Comparison of the Breakdown Behavior of In0.52Al0.48As and InP Near-Infrared Single-Photon Avalanche Photodiodes

  • Quantum Electronics, IEEE Journal of
  • Volume: 45, Issue: 5, Pages: 566-571, 2009
  • Souye Cheong Liew Tat Mun, Chee Hing Tan, S.J. Dimler, L.J.J. Tan, Jo Shien Ng, Yu Ling Goh, J.P.R. David
  • abstract, full paper

Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

  • Quantum Electronics, IEEE Journal of
  • Volume: 45, Issue: 1, Pages: 79-85, 2009
  • N.F. Hasbullah, Jo Shien Ng, Hui-Yun Liu, M. Hopkinson, J. David, T.J. Badcock, D.J. Mowbray
  • abstract, full paper

2008

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

  • Applied Physics Letters
  • Volume: 93, Issue: 11, Pages: 111107-3, 2008
  • A. R. J. Marshall, C. H. Tan, M. J. Steer, J. P. R. David
  • abstract, full paper

AlGaAs diodes for X-ray spectroscopy

  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • Volume: 594, Issue: 2, Pages: 202-205, September 2008
  • J.E. Lees, D.J. Bassford, J.S. Ng, C.H. Tan, J.P.R. David
  • abstract, full paper

Modeling of avalanche multiplication and excess noise factor in In0.52Al0.48As avalanche photodiodes using a simple Monte Carlo model

  • Journal of Applied Physics
  • Volume: 104, Issue: 1, Pages: 013114-6, July 2008
  • S. C. Liew Tat Mun, C. H. Tan, Y. L. Goh, A. R. J. Marshall, J. P. R. David
  • abstract, full paper

Material Considerations for Avalanche Photodiodes

  • Selected Topics in Quantum Electronics, IEEE Journal of
  • Volume: 14, Issue: 4, Pages: 998-1009, 2008
  • J.P.R. David, C.H. Tan
  • abstract, full paper

Impact Ionization Coefficients in 4H-SiC

  • Electron Devices, IEEE Transactions on
  • Volume: 55, Issue: 8, Pages: 1984-1990, 2008
  • W.S. Loh, B.K. Ng, S.I. Soloviev, Ho-Young Cha, P.M. Sandvik, C.M. Johnson, J.P.R. David
  • abstract, full paper

Quantum dots in strained layers - preventing relaxation through the precipitate hardening effect

  • Journal of Applied Physics
  • Volume: 104, Issue: 12, Pages: 123502-4, December 2008
  • R. Beanland, J. P. R. David, A. M. Sanchez
  • abstract, full paper

Avalanche Noise Characteristics in Submicron InP Diodes

  • Quantum Electronics, IEEE Journal of
  • Volume: 44, Issue: 4, Pages: 378-382, 2008
  • L.J.J. Tan, J.S. Ng, C.H. Tan, J.P.R. David
  • abstract, full paper

2007

Single-photon avalanche diode detectors for quantum key distribution

Effects of ionization velocity and dead space on avalanche photodiode bit error rate

Statistics of Avalanche Current Buildup Time in Single-Photon Avalanche Diodes

Capacitive Quenching Measurement Circuit for Geiger-Mode Avalanche Photodiodes

Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors

Effect of Dead Space on Low-Field Avalanche Multiplication in InP

Excess Avalanche Noise in In0.52Al0.48As

  • Quantum Electronics, IEEE Journal of
  • Volume: 43, Issue: 6, Pages: 503-507, 2007
  • Y.L. Goh, A.R.J. Marshall, D.J. Massey, J.S. Ng, C.H. Tan, M. Hopkinson, J.P.R. David, S.K. Jones, C.C. Button, S.M. Pinches
  • abstract, full paper

Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs

  • Journal of Applied Physics
  • Volume: 101, Issue: 6, Pages: 064506-6, March 2007
  • J. S. Ng, W. M. Soong, M. J. Steer, M. Hopkinson, J. P. R. David, J. Chamings, S. J. Sweeney, A. R. Adams
  • abstract, full paper

Double transit region Gunn diodes

  • Semiconductor Science and Technology
  • Volume: 22, Issue: 3, Pages: 245-248, 2007
  • K. S. Lau, R. C. Tozer, J. P. R. David, M. Hopkinson, G. J. Rees, M. Carr, N. Priestley, Y. P. Teoh, G. M. Dunn
  • abstract

Effects of dead space on breakdown probability in Geiger mode avalanche photodiode

  • Journal of Modern Optics
  • Volume: 54, Issue: 2, Pages: 353-360, 2007
  • J. S. Ng, C. H. Tan, G. J. Rees, J. P. R. David
  • abstract

Avalanche Multiplication in InAlAs

  • Electron Devices, IEEE Transactions on
  • Volume: 54, Issue: 1, Pages: 11-16, 2007
  • Y. L. Goh, D. J. Massey, A. R. J. Marshall, J. S. Ng, C. H. Tan, W. K. Ng, G. J. Rees, M. Hopkinson, J. P. R. David, S. K. Jones
  • abstract, full paper

2006

Photoluminescence beyond 1.5 m from InAs quantum dots

  • Microelectronics Journal
  • Volume: 37, Issue: 12, Pages: 1468-1470, December 2006
  • J.S. Ng, H.Y. Liu, M.J. Steer, M. Hopkinson, J.P.R. David
  • abstract

Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer

  • IEE Proceedings - Optoelectronics
  • Volume: 153, Issue: 4, Pages: 191-194, 2006
  • J.S. Ng, C.H. Tan, J.P.R. David
  • abstract

Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices

  • Electron Devices, IEEE Transactions on
  • Volume: 53, Issue: 9, Pages: 2328-2334, 2006
  • D.J. Massey, J.P.R. David, G.J. Rees
  • abstract, full paper

Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end

  • Measurement Science and Technology
  • Volume: 17, Issue: 7, Pages: 1941-1946, 2006
  • K. S. Lau, C. H. Tan, B. K. Ng, K. F. Li, R. C. Tozer, J. P. R. David, G. J. Rees
  • abstract

Design and performance of an InGaAs-InP single-photon avalanche diode detector

  • Quantum Electronics, IEEE Journal of
  • Volume: 42, Issue: 4, Pages: 397-403, 2006
  • S. Pellegrini, R.E. Warburton, L.J.J. Tan, Jo Shien Ng, A.B. Krysa, K. Groom, J.P.R. David, S. Cova, M.J. Robertson, G.S. Buller
  • abstract, full paper

Room-temperature 1.6 m light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

  • Journal of Applied Physics
  • Volume: 99, Issue: 4, Pages: 046104-3, February 2006
  • H. Y. Liu, M. J. Steer, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, F. Suarez, J. S. Ng, M. Hopkinson, J. P. R. David
  • abstract, full paper

Optical properties of AlGaN/GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate

  • Journal of Applied Physics
  • Volume: 99, Issue: 2, Pages: 023513-4, January 2006
  • J. Bai, T. Wang, P. Comming, P. J. Parbrook, J. P. R. David, A. G. Cullis
  • abstract, full paper

2005

Excess noise measurement in In0.53Ga0.47As

  • Photonics Technology Letters, IEEE
  • Volume: 17, Issue: 11, Pages: 2412-2414, 2005
  • Yu Ling Goh, Jo Shien Ng, Chee Hing Tan, W.K. Ng, J.P.R. David
  • abstract, full paper

Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes

  • Quantum Electronics, IEEE Journal of
  • Volume: 41, Issue: 8, Pages: 1092-1096, 2005
  • J.S. Ng, C.H. Tan, J.P.R. David, G.J. Rees
  • abstract, full paper

Exponential time response in analogue and Geiger mode avalanche photodiodes

  • Electron Devices, IEEE Transactions on
  • Volume: 52, Issue: 7, Pages: 1527-1534, 2005
  • C. Groves, C.H. Tan, J.P.R. David, G.J. Rees, M.M. Hayat
  • abstract, full paper

Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes

  • Journal of Applied Physics
  • Volume: 97, Issue: 8, Pages: 083104-4, April 2005
  • T. Wang, G. Raviprakash, F. Ranalli, C. N. Harrison, J. Bai, J. P. R. David, P. J. Parbrook, J. P. Ao, Y. Ohno
  • abstract, full paper

Enhanced optical and structural properties of 1.3 m GaInNAs/GaAs multiple quantum-well heterostructures with stepped strain-mediating layers

  • Applied Physics Letters
  • Volume: 86, Issue: 6, Pages: 062107-3, February 2005
  • H. Y. Liu, W. M. Soong, P. Navaretti, M. Hopkinson, J. P. R. David
  • abstract, full paper

Avalanche noise characteristics of single AlxGa1-xAs (0.3<x<0.6)-GaAs heterojunction APDs>/a>

2004

Temperature dependence of breakdown voltage in AlxGa1-xAs

  • Journal of Applied Physics
  • Volume: 96, Issue: 9, Pages: 5017-5019, November 2004
  • C. Groves, C. N. Harrison, J. P. R. David, G. J. Rees
  • abstract, full paper

Influences of the spacer layer growth temperature on multilayer InAs/GaAs quantum dot structures

  • Journal of Applied Physics
  • Volume: 96, Issue: 4, Pages: 1988-1992, 2004
  • H. Y. Liu, I. R. Sellers, M. Gutierrez, K. M. Groom, W. M. Soong, M. Hopkinson, J. P. R. David, R. Beanland, T. J. Badcock, D. J. Mowbray, M. S. Skolnick
  • abstract, full paper

Improved performance of 1.3 m multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

  • Applied Physics Letters
  • Volume: 85, Issue: 5, Pages: 704-706, 2004
  • H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutierrez, M. Hopkinson, J. S. Ng, J. P. R. David, R. Beanland
  • abstract, full paper

A comparison of avalanche breakdown probabilities in semiconductor materials

  • Journal of Modern Optics
  • Volume: 51, Issue: 9, Pages: 1315, 2004
  • J. S. Ng, C. H. Tan, J. P. R. David
  • abstract

Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes

  • Journal of Applied Physics
  • Volume: 95, Issue: 11, Pages: 6245-6251, June 2004
  • C. Groves, J. P. R. David, G. J. Rees, D. S. Ong
  • abstract, full paper

Impact ionization in submicron silicon devices

  • Journal of Applied Physics
  • Volume: 95, Issue: 10, Pages: 5931-5933, May 15, 2004
  • D. J. Massey, J. P. R. David, C. H. Tan, B. K. Ng, G. J. Rees, D. J. Robbins, D. C. Herbert
  • abstract, full paper

Enhanced carrier velocity to early impact ionization

  • Journal of Applied Physics
  • Volume: 95, Issue: 7, Pages: 3561-3564, April 2004
  • P. J. Hambleton, J. P. R. David, G. J. Rees
  • abstract, full paper

Temperature dependence of electron impact ionization in In0.53Ga0.47As

  • Applied Physics Letters
  • Volume: 84, Issue: 13, Pages: 2322-2324, March 2004
  • C. H. Tan, G. J. Rees, P. A. Houston, J. S. Ng, W. K. Ng, J. P. R. David
  • abstract, full paper

Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction

  • IEE Proceedings - Optoelectronics
  • Volume: 151, Issue: 5, Pages: 301-304, October 2004
  • P. Navaretti, H.Y. Liu, M. Hopkinson, M. Gutierrez, J.P.R. David, G. Hill, M. Herrera, D. Gonzalez, R. Garcia
  • abstract

Investigations of 1.55 m GaInNAs/GaAs heterostructures by optical spectroscopy

  • Optoelectronics, IEE Proceedings -
  • Volume: 151, Issue: 5, Pages: 331-334, 2004
  • H.D. Sun, A.H. Clark, S. Calvez, M.D. Dawson, H.Y. Liu, M. Hopkinson, P. Navaretti, M. Gutierrez, J.S. Ng, J.P.R. David, P. Gilet, L. Grenouillet, A. Million
  • abstract

2003

Improving optical properties of 1.55 m GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer

  • Applied Physics Letters
  • Volume: 83, Issue: 24, Pages: 4951-4953, December 2003
  • H. Y. Liu, M. Hopkinson, P. Navaretti, M. Gutierrez, J. S. Ng, J. P. R. David
  • abstract, full paper

Temperature dependence of impact ionization in GaAs

  • Electron Devices, IEEE Transactions on
  • Volume: 50, Issue: 10, Pages: 2027-2031, 2003
  • C. Groves, R. Ghin, J.P.R. David, G.J. Rees
  • abstract, full paper

Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors

  • Electron Devices, IEEE Transactions on
  • Volume: 50, Issue: 10, Pages: 2021-2026, 2003
  • M. Yee, W.K. Ng, J.P.R. David, P.A. Houston, C.H. Tan, A. Krysa
  • abstract, full paper

Temperature dependent low-field electron multiplication in In0.53Ga0.47As

  • Applied Physics Letters
  • Volume: 83, Issue: 14, Pages: 2820-2822, October 2003
  • W. K. Ng, C. H. Tan, J. P. R. David, P. A. Houston, M. Yee, J. S. Ng
  • abstract, full paper

Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

  • Electron Devices, IEEE Transactions on
  • Volume: 50, Issue: 8, Pages: 1724-1732, 2003
  • B.K. Ng, J.P.R. David, R.C. Tozer, G.J. Rees, Feng Yan, J.H. Zhao, M. Weiner
  • abstract, full paper

The effect of dead space on gain and excess noise in In0.48Ga0.52P p+in+ diodes

  • Semiconductor Science and Technology
  • Volume: 18, Issue: 8, Pages: 803-806, 2003
  • C. H. Tan, R. Ghin, J. P. R. David, G. J. Rees, M. Hopkinson
  • abstract

Multiplication and excess noise in AlxGa1-xAs/GaAs multilayer avalanche photodiodes

  • Journal of Applied Physics
  • Volume: 94, Issue: 4, Pages: 2631-2637, 2003
  • C. K Chia, B. K. Ng, J. P. R. David, G. J. Rees, R. C. Tozer, M. Hopkinson, R. J. Airey, P. N. Robson
  • abstract, full paper

The effect of ionization threshold softness on the temperature dependence of the impact ionization coefficient

  • Semiconductor Science and Technology
  • Volume: 18, Issue: 7, Pages: 689-692, 2003
  • C. Groves, J. P. R. David, G. J. Rees
  • abstract

Time response modelling in submicron avalanche photodiodes

  • IEE Proceedings - Optoelectronics
  • Volume: 150, Issue: 2, Pages: 167-170, April 2003
  • P.J. Hambleton, S.A. Plimmer, J.P.R. David, G.J. Rees
  • abstract

Field dependence of impact ionization coefficients in In0.53Ga0.47As

  • Electron Devices, IEEE Transactions on
  • Volume: 50, Issue: 4, Pages: 901-905, 2003
  • J.S. Ng, C.H. Tan, J.P.R. David, G. Hill, G.J. Rees
  • abstract, full paper

Performance of thin 4H-SiC UV avalanche photodiodes

  • IEE Proceedings - Optoelectronics
  • Volume: 150, Issue: 2, Pages: 187-190, April 2003
  • B.K. Ng, J.P.R. David, R.C. Tozer, G.J. Rees, F. Yan, C. Qin, J.H. Zhao
  • abstract

Avalanche speed in thin avalanche photodiodes

  • Journal of Applied Physics
  • Volume: 93, Issue: 7, Pages: 4232-4239, April 2003
  • D. S. Ong, G. J. Rees, J. P. R. David
  • abstract, full paper

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

  • Electron Devices, IEEE Transactions on
  • Volume: 50, Issue: 2, Pages: 347-351, 2003
  • P.J. Hambleton, B.K. Ng, S.A. Plimmer, J.P.R. David, G.J. Rees
  • abstract, full paper

Negative temperature dependence of electron multiplication in In0.53Ga0.47As

  • Applied Physics Letters
  • Volume: 82, Issue: 8, Pages: 1224-1226, February 2003
  • M. Yee, W. K. Ng, J. P. R. David, P. A. Houston, C. N. Harrison
  • abstract, full paper

Calculation of APD impulse response using a space- and time-dependent ionization probability distribution function

  • Lightwave Technology, Journal of
  • Volume: 21, Issue: 1, Pages: 155-159, 2003
  • C.H. Tan, P.J. Hambleton, J.P.R. David, R.C. Tozer, G.J. Rees
  • abstract, full paper

2002

Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0.9)

  • Electron Devices, IEEE Transactions on
  • Volume: 49, Issue: 12, Pages: 2349-2351, 2002
  • B.K. Ng, J.P.R. David, G.J. Rees, R.C. Tozer, M. Hopkinson, R.J. Airey
  • abstract, full paper

Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes

  • Journal of Applied Physics
  • Volume: 92, Issue: 12, Pages: 7684-7686, December 2002
  • C. N. Harrison, J. P. R. David, M. Hopkinson, G. J. Rees
  • abstract, full paper

A general method for estimating the duration of avalanche multiplication

  • Semiconductor Science and Technology
  • Volume: 17, Issue: 10, Pages: 1067-1071, 2002
  • J. S. Ng, C. H. Tan, J. P. R. David, G. J. Rees
  • abstract

Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

  • Photonics Technology Letters, IEEE
  • Volume: 14, Issue: 9, Pages: 1342-1344, 2002
  • B.K. Ng, F. Yan, J.P.R. David, R.C. Tozer, G.J. Rees, C. Qin, J.H. Zhao
  • abstract, full paper

Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2 positive bevel

  • Electronics Letters
  • Volume: 38, Issue: 7, Pages: 335-336, March 2002
  • F. Yan, C. Qin, J.H. Zhao, M. Weiner, B.K. Ng, J.P.R. David, R.C. Tozer
  • abstract

Avalanche breakdown voltage of In0.53Ga0.47As

  • Journal of Applied Physics
  • Volume: 91, Issue: 8, Pages: 5200-5202, April 2002
  • J. S. Ng, J. P. R. David, G. J. Rees, J. Allam
  • abstract, full paper

Fokker-Planck approach to impact ionization distributions in space and time

  • Journal of Applied Physics
  • Volume: 91, Issue: 8, Pages: 5438-5441, April 2002
  • Biju Jacob, P. N. Robson, J. P. R. David, G. J. Rees
  • abstract, full paper

Effect of dead space on avalanche speed

  • Electron Devices, IEEE Transactions on
  • Volume: 49, Issue: 4, Pages: 544-549, 2002
  • J.S. Ng, C.H. Tan, B.K. Ng, P.J. Hambleton, J.P.R. David, G.J. Rees, A.H. You, D.S. Ong
  • abstract, full paper

Excess noise characteristics of Al0.8Ga0.2As avalanche photodiodes

  • Photonics Technology Letters, IEEE
  • Volume: 14, Issue: 4, Pages: 522-524, 2002
  • B.K. Ng, J.P.R. David, R.C. Tozer, M. Hopkinson, G. Hill, G.J. Rees
  • abstract, full paper

Simulated current response in avalanche photodiodes

  • Journal of Applied Physics
  • Volume: 91, Issue: 4, Pages: 2107-2111, February 2002
  • P. J. Hambleton, S. A. Plimmer, J. P. R. David, G. J. Rees, G. M. Dunn
  • abstract, full paper

Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor

  • Journal of Applied Physics
  • Volume: 91, Issue: 3, Pages: 1601-1605, February, 2002
  • M. Yee, P. A. Houston, J. P. R. David
  • abstract, full paper

Limitations of the saturated drift velocity approximation for time domain modelling

  • Semiconductor Science and Technology
  • Volume: 17, Issue: 2, Pages: 124-128, 2002
  • P. J. Hambleton, S. A. Plimmer, G. J. Rees
  • abstract

2001

Impact ionisation coefficients of In0.53Ga0.47As

  • IEE Proceedings - Optoelectronics
  • Volume: 148, Issue: 5-6, Pages: 225-228, October 2001
  • J.S. Ng, J.P.R. David, G.J. Rees, S.M. Pinches, G. Hill
  • abstract

Al0.8Ga0.2As: A very low excess noise multiplication medium for avalanche photodiodes

  • IEE Proceedings - Optoelectronics
  • Volume: 148, Issue: 5-6, Pages: 243-246, October 2001
  • B.K. Ng, J.P.R. David, S.A. Plimmer, R.C. Tozer, G.J. Rees, M. Hopkinson
  • abstract

Avalanche multiplication characteristics of Al0.8Ga0.2As diodes

  • Electron Devices, IEEE Transactions on
  • Volume: 48, Issue: 10, Pages: 2198-2204, 2001
  • B.K. Ng, J.P.R. David, S.A. Plimmer, G.J. Rees, R.C. Tozer, M. Hopkinson, G. Hill
  • abstract, full paper

Treatment of soft threshold in impact ionization

  • Journal of Applied Physics
  • Volume: 90, Issue: 5, Pages: 2538-2543, 2001
  • C. H. Tan, J. P. R. David, G. J. Rees, R. C. Tozer, D. C. Herbert
  • abstract, full paper

Fokker-Planck model for nonlocal impact ionization in semiconductors

  • Journal of Applied Physics
  • Volume: 90, Issue: 3, Pages: 1314-1317, 2001
  • Biju Jacob, P. N. Robson, J. P. R. David, G. J. Rees
  • abstract, full paper

Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes

  • Electron Devices, IEEE Transactions on
  • Volume: 48, Issue: 7, Pages: 1310-1317, 2001
  • Chee Hing Tan, J.P.R. David, S.A. Plimmer, G.J. Rees, R.C. Tozer, R. Grey
  • abstract, full paper

Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined

  • Journal of Physics D: Applied Physics
  • Volume: 34, Issue: 13, Pages: 1943-1946, 2001
  • M. Moran, H. Meidia, T. Fleischmann, D. J. Norris, G. J. Rees, A. G. Cullis, M. Hopkinson
  • abstract

Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition

  • Journal of Applied Physics
  • Volume: 89, Issue: 9, Pages: 4689-4696, May 2001
  • T. Fleischmann, M. Moran, M. Hopkinson, H. Meidia, G. J. Rees, A. G. Cullis, J. L. Sanchez-Rojas, I. Izpura
  • abstract, full paper

Impact ionization probabilities as functions of two-dimensional space and time

  • Journal of Applied Physics
  • Volume: 89, Issue: 5, Pages: 2742-2751, March 2001
  • S. A. Plimmer, J. P. R. David, B. Jacob, G. J. Rees
  • abstract, full paper

Lucky-drift model for nonlocal impact ionisation

  • IEE Proceedings - Optoelectronics
  • Volume: 148, Issue: 1, Pages: 81-83, February 2001
  • B. Jacob, S.A. Plimmer, P.N. Robson, G.J. Rees
  • abstract

2000

Impact ionization coefficients of Al0.8Ga0.2As

  • Semiconductor Science and Technology
  • Volume: 15, Issue: 7, Pages: 692-699, December 2000
  • S. A. Plimmer, J. P. R. David, G. J. Rees, P. N. Robson
  • abstract

Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures

  • Journal of Applied Physics
  • Volume: 88, Issue: 5, Pages: 2601-2608, September 2000
  • C. K. Chia, J. P. R. David, S. A. Plimmer, G. J. Rees, R. Grey, P. N. Robson
  • abstract, full paper

Ionization coefficients in AlxGa1-xAs (x = 0 - 0.60)

  • Semiconductor Science and Technology
  • Volume: 15, Issue: 7, Pages: 692-699, Jul. 2000
  • S A Plimmer, J P R David, G J Rees and P N Robson
  • abstract

Avalanche noise measurement in thin Si p+-i-n+ diodes

  • Applied Physics Letters
  • Volume: 76, Issue: 26, Pages: 3926-3928, June 2000
  • C. H. Tan, J. C. Clark, J. P. R. David, G. J. Rees, S. A. Plimmer, R. C. Tozer, D. C. Herbert, D. J. Robbins, W. Y. Leong, J. Newey
  • abstract, full paper

Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes

  • Journal of Applied Physics
  • Volume: 87, Issue: 11, Pages: 7885-7891, June 2000
  • D. S. Ong, K. F. Li, S. A. Plimmer, G. J. Rees, J. P. R. David, P. N. Robson
  • abstract, full paper

Avalanche noise characteristics of thin GaAs structures with distributed carrier generation

The merits and limitations of local impact ionization theory

  • Electron Devices, IEEE Transactions on
  • Volume: 47, Issue: 5, Pages: 1080-1088, May 2000
  • S.A. Plimmer, J.P.R. David, D.S. Ong
  • abstract, full paper

Avalanche multiplication in AlxGa1-xAs (x=0 to 0.60)

  • Electron Devices, IEEE Transactions on
  • Volume: 47, Issue: 5, Pages: 1089-1097, May 2000
  • S.A. Plimmer, J.P.R. David, R. Grey, G.J. Rees
  • abstract, full paper

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

  • Physical Review Letters
  • Volume: 84, Issue: 4, Pages: 733, January 24, 2000
  • P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, J. C. Clark
  • abstract

1999

Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p+in+ diodes

  • Semiconductor Science and Technology
  • Volume: 14, Issue: 11, Pages: 994-1000, November 1999
  • G. M. Dunn, R. Ghin, G. J. Rees, J. P. R. David, S. Plimmer, D. C. Herbert
  • abstract

The effect of an electric-field gradient on avalanche noise

  • Applied Physics Letters
  • Volume: 75, Issue: 19, Pages: 2963-2965, November 1999
  • S. A. Plimmer, C. H. Tan, J. P. R. David, R. Grey, K. F. Li, G. J. Rees
  • abstract, full paper

Photoluminescence linewidths of piezoelectric quantum wells

  • Applied Physics Letters
  • Volume: 75, Issue: 13, Pages: 1929-1931, September 1999
  • E. A. Khoo, J. P. R. David, J. Woodhead, R. Grey, G. J. Rees
  • abstract, full paper

A simple model for avalanche multiplication including deadspace effects

Low avalanche noise characteristics in thin InP p+-i-n+ diodes with electron initiated multiplication

  • Photonics Technology Letters, IEEE
  • Volume: 11, Issue: 3, Pages: 364-366, March 1999
  • K.F. Li, S.A. Plimmer, J.P.R. David, R.C. Tozer, G.J. Rees, P.N. Robson, C.C. Button, J.C. Clark
  • abstract, full paper

Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors

  • IEE Proceedings - Optoelectronics
  • Volume: 146, Issue: 1, Pages: 21-24, February 1999
  • K.F. Li, D.S. Ong, J.P.R. David, R.C. Tozer, G.J. Rees, P.N. Robson, R. Grey
  • abstract

Piezoelectric InGaAs/AlGaAs laser with intracavity absorber

  • IEE Proceedings - Optoelectronics
  • Volume: 146, Issue: 1, Pages: 62-65, February 1999
  • E.A. Khoo, A.S. Pabla, J. Woodhead, J.P.R. David, R. Grey, G.J. Rees
  • abstract

Operating characteristics of GaAs-InGaAs self-biased piezoelectric S-SEEDs

  • IEE Proceedings - Optoelectronics
  • Volume: 146, Issue: 1, Pages: 31-34, February 1999
  • M. Moran, G.J. Rees, J. Woodhead
  • abstract

Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber

  • Electronics Letters
  • Volume: 35, Issue: 2, Pages: 150-152, January 1999
  • E.A. Khoo, J. Woodhead, J.P.R. David, R. Grey, G.J. Rees
  • abstract

1998

Effects of high temperature annealing on the device characteristics of Ga0.52In0.48P/GaAs and Al0.52In0.48P/GaAs heterojunction bipolar transistors

  • Journal of Electronic Materials
  • Volume: 27, Issue: 1, Pages: 18-24, December 1998
  • H. K. Yow, P. A. Houston, C. C. Button, J. P. R. David and C. M. S. Ng
  • abstract

Impact ionization in AlxGa1-xAs/GaAs single heterostructures

  • Journal of Applied Physics
  • Volume: 84, Issue: 8, Pages: 4363-4369, October 15 1998
  • C. K. Chia, J. P. R. David, G. J. Rees, S. A. Plimmer, R. Grey, P. N. Robson
  • abstract, full paper

Avalanche multiplication and breakdown in Ga0.52In0.48P diodes

  • Electron Devices, IEEE Transactions on
  • Volume: 45, Issue: 10, Pages: 2096-2101, October 1998
  • R. Ghin, J.P.R. David, S.A. Plimmer, M. Hopkinson, G.J. Rees, D.C. Herbert, D.R. Wight
  • abstract, full paper

Avalanche multiplication noise characteristics in thin GaAs p+-i-n+ diodes

  • Electron Devices, IEEE Transactions on
  • Volume: 45, Issue: 10, Pages: 2102-2107, October 1998
  • K.F. Li, D.S. Ong, J.P.R. David, G.J. Rees, R.C. Tozer, P.N. Robson, R. Grey
  • abstract, full paper

A Monte Carlo investigation of multiplication noise in thin p+-i-n+ GaAs avalanche photodiodes

  • Electron Devices, IEEE Transactions on
  • Volume: 45, Issue: 8, Pages: 1804-1810, August 1998
  • D.S. Ong, K.F. Li, G.J. Rees, G.M. Dunn, J.P.R. David, P.N. Robson
  • abstract, full paper

Avalanche multiplication in GaInP/GaAs single heterojunction bipolar transistors

  • Electron Devices, IEEE Transactions on
  • Volume: 45, Issue: 6, Pages: 1207-1212, June 1998
  • R.M. Flitcroft, J.P.R. David, P.A. Houston, C.C. Button
  • abstract, full paper

A simple model to determine multiplication and noise in avalanche photodiodes

  • Journal of Applied Physics
  • Volume: 83, Issue: 6, Pages: 3426-3428, March 15 1998
  • D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, P. N. Robson
  • abstract, full paper

Electrical and optical characterisation of heavily doped GaAs:C bases of heterojunction bipolar transistors

  • Solid-State Electronics
  • Volume: 42, Issue: 1, Pages: 115-120, January 1998
  • B. C. Lye, P. A. Houston, C. C. Button, J. P. R. David
  • abstract

Low excess noise characteristics in thin avalanche region GaAs diodes

  • Electronics Letters
  • Volume: 34, Issue: 1, Pages: 125-126, January 1998
  • K.F. Li, D.S. Ong, J.P.R. David, R.C. Tozer, G.J. Rees, P.N. Robson, R. Grey
  • abstract

Monte Carlo estimation of avalanche noise in thin p+-i-n+ GaAs diodes

  • Applied Physics Letters
  • Volume: 72, Issue: 2, Pages: 232-234, January 1998
  • D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, P. N. Robson, G. M. Dunn
  • abstract, full paper

1997

Investigation of band non-parabolicities in strain-balanced GaInAs/GaAlInAs coupled quantum wells

  • Superlattices and Microstructures
  • Volume: 22, Issue: 4, Pages: 517-520, December 1997
  • R. W. Martin, F. J. McGow, M. Hopkinson, J. P. R. David
  • abstract

Simulation of impact ionization breakdown in MESFETS using Monte Carlo methods

  • Semiconductor Science and Technology
  • Volume: 12, Issue: 9, Pages: 1147-1153, September 1997
  • G. M. Dunn, G. J. Rees, J. P. R. David
  • abstract

Mapping the confined optical field in a microcavity via the emission from a conjugated polymer

  • Applied Physics Letters
  • Volume: 71, Issue: 6, Pages: 744-746, August 1997
  • D. G. Lidzey, D. D. C. Bradley, M. A. Pate, J. P. R. David, D. M. Whittaker, T. A. Fisher, M. S. Skolnick
  • abstract, full paper

Impact ionization in thin AlxGa1-xAs (x=0.15 and 0.30) p-i-n diodes

  • Journal of Applied Physics
  • Volume: 82, Issue: 3, Pages: 1231-1235, August 1997
  • S. A. Plimmer, J. P. R. David, G. J. Rees, R. Grey, D. C. Herbert, D. R. Wight, A. W. Higgs
  • abstract, full paper

Electrical and optical bistability in InxGa1-xAs-GaAs piezoelectric quantum wells

  • Physical Review B
  • Volume: 55, Issue: 24, Pages: R16045, June 1997
  • L. R. Wilson, D. J. Mowbray, M. S. Skolnick, V. N. Astratov, D. W. Peggs, G. J. Rees, J. P. R. David, R. Grey, G. Hill, M. A. Pate
  • abstract

Impact ionization coefficients in GaInP p-i-n diodes

  • Applied Physics Letters
  • Volume: 70, Issue: 26, Pages: 3567-3569, June 1997
  • R. Ghin, J. P. R. David, M. Hopkinson, M. A. Pate, G. J. Rees, P. N. Robson
  • abstract, full paper

Monte Carlo simulation of impact ionization in photodetectors

  • Semiconductor Science and Technology
  • Volume: 12, Issue: 6, Pages: 692-697, June 1997
  • G. M. Dunn, G. J. Rees, J. P. R. David
  • abstract

Low threshold InGaAs/AlGaAs lasers grown on (111)B GaAs substrate

  • Electronics Letters
  • Volume: 33, Issue: 11, Pages: 957-958, May 1997
  • E.A. Khoo, A.S. Pabla, J. Woodhead, J.P.R. David, R. Grey, G.J. Rees
  • abstract

Monte Carlo simulation of impact ionisation in MESFETs Monte Carlo simulation of impact ionisation in MESFETs

  • Electronics Letters
  • Volume: 33, Issue: 7, Pages: 639-640, March 1997
  • G.M. Dunn, G.J. Rees, J.P.R. David
  • abstract

Monte Carlo simulation of impact ionisation in photodetectors

  • Electronics Letters
  • Volume: 33, Issue: 4, Pages: 337-339, February 1997
  • G.M. Dunn, G.J. Rees, J.P.R. David
  • abstract

Electron multiplication in AlxGa1-xAs/GaAs heterostructures

  • Applied Physics Letters
  • Volume: 71, Issue: 26, Pages: 3877-3879, December 1997
  • C. K. Chia, J. P. R. David, G. J. Rees, P. N. Robson, S. A. Plimmer, R. Grey
  • abstract, full paper

Spatial limitations to the application of the lucky-drift theory of impact ionization

  • Electron Devices, IEEE Transactions on
  • Volume: 44, Issue: 4, Pages: 659-663, April 1997
  • S.A. Plimmer, J.P.R. David, G.M. Dunn
  • abstract, full paper

Electrical and optical bistability in [111] GaInAs-GaAs piezo-electric quantum wells

  • Superlattices and Microstructures
  • Volume: 21, Issue: 1, Pages: 113-118, January 1997
  • L. R Wilson, D. J. Mowbray, M. S. Skolnick, D. W. Peggs, G. J. Rees, J. P. R. David, R. Grey, G. Hill, M. A. Pate
  • abstract

Influence of ordering on the polarization characteristics of GaInP vertical-cavity surface-emitting lasers

  • Photonics Technology Letters, IEEE
  • Volume: 9, Issue: 2, Pages: 143-145, February 1997
  • Y.H. Chen, C.I. Wilkinson, J. Woodhead, J.P.R. David, C.C. Button, P.N. Robson
  • abstract, full paper

Monte Carlo simulation of impact ionization and current multiplication in short GaAs p+in+ diodes Monte Carlo simulation of impact ionization and current multiplication in short GaAs diodes

  • Semiconductor Science and Technology
  • Volume: 12, Issue: 1, Pages: 111-120, January 1997
  • G. M. Dunn, G. J. Rees, J. P. R. David, S. A. Plimmer, D. C. Herbert
  • abstract

1996

Monte Carlo simulation of high field transport and impact ionization in GaAs p+in+ diodes

  • Electron Devices, IEEE Transactions on
  • Volume: 43, Issue: 12, Pages: 2303-2305, December 1996
  • G.M. Dunn, G.J. Rees, J.P.R. David, S.A. Plimmer, D.C. Herbert
  • abstract, full paper

Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

  • Journal of Applied Physics
  • Volume: 80, Issue: 10, Pages: 5815-5820, November 15 1996
  • P. R. Griffin, J. Barnes, K. W. J. Barnham, G. Haarpaintner, M. Mazzer, C. Zanotti-Fregonara, E. Grünbaum, C. Olson, C. Rohr, J. P. R. David, J. S. Roberts, R. Grey, M. A. Pate
  • abstract, full paper

Investigation of impact ionization in thin GaAs diodes

Optical spectroscopic observation of spontaneous long range ordering in AlGaInP

  • Applied Physics Letters
  • Volume: 68, Issue: 23, Pages: 3266-3268, June 1996
  • O. P. Kowalski, R. M. Wegerer, D. J. Mowbray, M. S. Skolnick, C. C. Button, J. S. Roberts, M. Hopkinson, J. P. R. David, G. Hill
  • abstract, full paper

Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration

  • Applied Physics Letters
  • Volume: 68, Issue: 12, Pages: 1595-1597, March 1996
  • A. S. Pabla, J. Woodhead, E. A. Khoo, R. Grey, J. P. R. David, G. J. Rees
  • abstract, full paper

Polarisation characteristics of InGaAlP/AlGaAs visible vertical cavity surface emitting lasers

  • Electronics Letters
  • Volume: 32, Issue: 6, Pages: 559-560, March 14 1996
  • Y.H. Chen, C.I. Wilkinson, J. Woodhead, C.C. Button, J.P.R. David, M.A. Pate, P.N. Robson
  • abstract

Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures

  • Applied Physics Letters
  • Volume: 68, Issue: 6, Pages: 820-822, February 1996
  • J. P. R. David, T. E. Sale, A. S. Pabla, P. J. Rodriguez-Girones, J. Woodhead, R. Grey, G. J. Rees, P. N. Robson, M. S. Skolnick, R. A. Hogg
  • abstract, full paper

Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields

  • Semiconductor Science and Technology
  • Volume: 11, Issue: 1, Pages: 34-38, January 1996
  • D. Kinder, R. J. Nicholas, P. N. Stavrinou, S. K. Haywood, L. Hart, M. Hopkinson, J. P. R. David, G. Hill
  • abstract

1995

InxGa1-xAs/InP quantum well structures grown on [111]B InP

  • Microelectronics Journal
  • Volume: 26, Issue: 8, Pages: 805-810, December 1995
  • M. Hopkinson, J. P. R. David, E. A. Khoo, A. S. Pabla, J. Woodhead, G. J. Rees
  • abstract
  • Microelectronics Journal

Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices

  • Microelectronics Journal
  • Volume: 26, Issue: 8, Pages: 811-820, December 1995
  • R. Grey, J. P. R. David, G. Hill, A. S. Pabla, M. A. Pate, G. J. Rees, P. N. Robson, P. J. Rodriguez-Girones, T. E. Sale, J. Woodhead, T. A. Fisher, R. A. Hogg, D. J. Mowbray, M. S. Skolnick, D. M. Whittaker, A. R. K. Willcox
  • abstract

Enhanced mobility piezoelectric AlInAs/InGaAs quantum well structures on (111)B InP substrates

  • Electronics Letters
  • Volume: 31, Issue: 25, Pages: 2215-2216, December 1995
  • L.J. Hitchens, P.A. Houston, M. Hopkinson, G.J. Rees
  • abstract

Growth of InAsxP1-x/InP multi-quantum well structures by solid source molecular beam epitaxy

  • Journal of Applied Physics
  • Volume: 78, Issue: 5, Pages: 3330-3334, September 1995
  • J. P. R. David, M. Hopkinson, P. N. Stavrinou, S. K. Haywood
  • abstract, full paper

Effect of misfit dislocations on leakage currents in strained multiquantum well structures

  • Applied Physics Letters
  • Volume: 67, Issue: 7, Pages: 906-908, August 1995
  • J. P. R. David, Y. H. Chen, R. Grey, G. Hill, P. N. Robson, P. Kightley
  • abstract, full paper

Observation of Wannier-Stark ladder transitions in InxGa1-xAs-GaAs piezoelectric superlattices

  • Physical Review B
  • Volume: 52, Issue: 20, Pages: 14340-14343, November 1995
  • D. W. Peggs, M. S. Skolnick, D. M. Whittaker, R. A. Hogg, A. R. K. Willcox, D. J. Mowbray, R. Grey, G. J. Rees, L. Hart, M. Hopkinson, G. Hill, M. A. Pate
  • abstract

Avalanche breakdown in AlxGa1-xAs alloys and Al0.3Ga0.7As/GaAs multilayers

  • Applied Physics Letters
  • Volume: 66, Issue: 21, Pages: 2876-2878, May 1995
  • J. P. R. David, J. Allam, A. R. Adams, J. S. Roberts, R. Grey, G. J. Rees, P. N. Robson
  • abstract, full paper

Electronic structure and field screening effects in 111 InGaAs-GaAs strained layer piezoelectric quantum-wells

  • Photonics Technology Letters, IEEE
  • Volume: 7, Issue: 1, Pages: 71-74, January 1995
  • P.J. Rodriguez-Girones, G.J. Rees
  • abstract, full paper

1994

High-purity AlGaAs from methyl-based precursors using in-situ gettering of alkoxides

  • Journal of Crystal Growth
  • Volume: 145, Issue: 1-4, Pages: 968-969, December 1994
  • J. S. Roberts, J. P. R. David
  • abstract

Optical spectroscopy of AlGaInP based wide band gap quantum wells

  • Superlattices and Microstructures
  • Volume: 15, Issue: 3, Pages: 313, April 1994
  • D. J. Mowbray, O. P. Kowalski, M. S. Skolnick, M. Hopkinson, J. P. R. David
  • abstract

Room- and low-temperature assessment of pseudomorphicAlGaAs/InGaAs/GaAs high-electron-mobility transistor structures byphotoluminescence spectroscopy

  • Journal of Applied Physics
  • Volume: 76, Issue: 10, Pages: 5931-5944, November 1994
  • J. M. Gilperez, J. L. Sanchez-Rojas, E. Munoz, E. Calleja, J. P. R. David, M. Reddy, G. Hill, J. Sanchez-Dehesa
  • abstract, full paper

Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis

  • Journal of Applied Physics
  • Volume: 76, Issue: 9, Pages: 5447-5452, November 1994
  • T. E. Sale, J. Woodhead, G. J. Rees, R. Grey, J. P. R. David,A. S. Pabla, P. J. Rodriguez-Girones, P. N. Robson, R. A. Hogg, M. S. Skolnick
  • abstract, full paper

High purity AlGaAs from methyl-based precursors using in situ gettering of alkoxides

  • Journal of Crystal Growth
  • Volume: 143, Issue: 3-4, Pages: 135-140, October 1994
  • J. S. Roberts, J. P. R. David, T. E. Sale, P. L. Tihanyi
  • abstract

Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures

  • Journal of Electronic Materials
  • Volume: 23, Issue: 9, Pages: 975-982, September 1994
  • JPR David, R. Grey, G. Rees, A. Pabla, T. Sale, J. Woodhead, J. Sanchez-Rojas, M. Pate, G. Hill, P. Robson, R. Hogg, T. Fisher, M. Skolnick, D. Whittaker, ARK Willcox, D. Mowbray
  • abstract

Electroabsorption modulation in strained piezoelectric InGaAs/InP multiquantum wells operating at λ ≈1.55 μm

  • Electronics Letters
  • Volume: 30, Issue: 20, Pages: 1707-1708, September 1994
  • A.S. Pabla, M. Hopkinson, J.P.R. David, E.A. Khoo, G.J. Rees
  • abstract

All-optical bistable switching in a strained piezoelectric self-electro-optic effect device

  • Electronics Letters
  • Volume: 30, Issue: 18, Pages: 1521-1522, September 1994
  • A.S. Pabla, J. Woodhead, R. Grey, G.J. Rees, J.P.R. David, M.A. Pate, P.N. Robson
  • abstract

Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures

  • Applied Physics Letters
  • Volume: 65, Issue: 7, Pages: 839-841, August 1994
  • D. J. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, R. Grey, J. P. R. David, L. Gonzalez, Y. Gonzalez, A. Sacedon, F. Gonzalez-Sanz
  • abstract, full paper

Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy

  • Applied Physics Letters
  • Volume: 65, Issue: 2, Pages: 213-215, July 1994
  • D. J. Mowbray, O. P. Kowalski, M. Hopkinson, M. S. Skolnick, J. P. R. David
  • abstract, full paper

Electroluminescence from InGaAs/InAlAs HEMTs

  • Electronics Letters
  • Volume: 30, Issue: 14, Pages: 1181-1183, July 1994
  • J. Woodhead, M. Reddy, J.P.R. David
  • abstract

Avalanche breakdown in (AlxGa1-x)0.52In0.48P pin junctions

  • Electronics Letters
  • Volume: 30, Issue: 11, Pages: 907-909, May 1994
  • J.P.R. David, M. Hopkinson, M.A. Pate
  • abstract

Solid-source molecular beam epitaxy growth of GaInP and GaInP-containing quantum wells

  • Journal of Applied Physics
  • Volume: 75, Issue: 4, Pages: 2029-2034, February 1994
  • D. J. Mowbray, O. P. Kowalski, M. S. Skolnick, M. C. DeLong, M. Hopkinson, J. P. R. David, A. G. Cullis
  • abstract, full paper

1993

Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

  • Physical Review B
  • Volume: 48, Issue: 11, Pages: 8491, September 1993
  • R. A. Hogg, T. A. Fisher, A. R. K. Willcox, D. M. Whittaker, M. S. Skolnick, D. J. Mowbray, J. P. R. David, A. S. Pabla, G. J. Rees, R. Grey, J. Woodhead, J. L. Sanchez-Rojas, G. Hill, M. A. Pate, P. N. Robson
  • abstract

Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs

  • Applied Physics Letters
  • Volume: 63, Issue: 6, Pages: 752-754, August 1993
  • A. S. Pabla, J. L. Sanchez-Rojas, J. Woodhead, R. Grey, J. P. R. David, G. J. Rees, G. Hill, M. A. Pate, P. N. Robson, R. A. Hogg, T. A. Fisher, A. R. K. Willcox, D. M. Whittaker, M. S. Skolnick, D. J. Mowbray
  • abstract, full paper

Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P

  • Journal of Applied Physics
  • Volume: 73, Issue: 10, Pages: 5163-5172, May 1993
  • M. C. DeLong, D. J. Mowbray, R. A. Hogg, M. S. Skolnick, M. Hopkinson, J. P. R. David, P. C. Taylor, Sarah R. Kurtz, J. M. Olson
  • abstract, full paper

1992

Impact ionization and electroluminescence in single barrier tunnelling structures

  • Superlattices and Microstructures
  • Volume: 12, Issue: 4, Pages: 443-446, 1992
  • J.W. Cockburn, M.S. Skolnick, J.P.R. David, R. Grey, G. Hill, M.A. Pate
  • abstract

Enhanced breakdown voltages in strained InGaAs/GaAs structures

  • Applied Physics Letters
  • Volume: 61, Issue: 17, Pages: 2042-2044, October 1992
  • J. P. R. David, M. J. Morley, A. R. Wolstenholme, R. Grey, M. A. Pate, G. Hill, G. J. Rees, P. N. Robson
  • abstract, full paper

Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation-doped field-effect transistors

  • Applied Physics Letters
  • Volume: 61, Issue: 10, Pages: 1225-1227, September 1992
  • J. M. Gilpérez, J. L. Sánchez-Rojas, E. Muñoz, E. Calleja, J. P. R. David, G. Hill, J. Castagné
  • abstract, full paper

Determination of low temperature impact ionization coefficients in GaAs by electroluminescence measurements on single barrier tunneling structures

  • Applied Physics Letters
  • Volume: 61, Issue: 7, Pages: 825-827, August 1992
  • J. W. Cockburn, M. S. Skolnick, J. P. R. David, R. Grey, G. Hill, M. A. Pate
  • abstract, full paper

Design of ridge waveguide couplers with carrier injection using discrete spectral index method

  • Electronics Letters
  • Volume: 28, Issue: 9, Pages: 841-842, April 1992
  • S.V. Burke, P.C. Kendall, P.N. Robson, G.J. Rees, M.J. Adams
  • abstract

Growth of strained InAs/InP quantum wells by molecular beam epitaxy

  • Applied Physics Letters
  • Volume: 60, Issue: 7, Pages: 841-843, February 1992
  • M. Hopkinson, J. P. R. David, P. A. Claxton, P. Kightley
  • abstract, full paper

1991

Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes

  • Journal of Electronic Materials
  • Volume: 20, Issue: 4, Pages: 295-297, April 1991
  • J. David, R. Grey, M. Pate, P. Claxton, J. Woodhead
  • abstract

1990

Low voltage strained layer asymmetric Fabry-Perot reflection modulator

  • Electronics Letters
  • Volume: 26, Issue: 25, Pages: 2117-2118, December 1990
  • J. Woodhead, P.A. Claxton, R. Grey, T.E. Sale, J.P.R. David, L. Liu, M.A. Pate, G. Hill, P.N. Robson
  • abstract

MOVPE growth of AlGaAs using trimethylamine alane

  • Journal of Crystal Growth
  • Volume: 104, Issue: 4, Pages: 857-860, September 1990
  • J. S. Roberts, C. C. Button, J. P. R. David, A. C. Jones, S. A. Rushworth
  • abstract

Carrier decay in GaAs quantum wells

  • Applied Physics Letters
  • Volume: 56, Issue: 3, Pages: 268-270, January, 1990
  • William Pickin, J. P. R. David
  • abstract, full paper

1989

The electron impact ionization rate and breakdown voltage in GaAs/Ga0.7Al0.3As MQW structures

  • Electron Device Letters, IEEE
  • Volume: 10, Issue: 7, Pages: 294-296, July 1989
  • J.P.R. David, J.S. Marsland, J.S. Roberts
  • abstract, full paper

Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures

  • Journal of Applied Physics
  • Volume: 66, Issue: 2, Pages: 975-977, July 1989
  • R. Grey, J. P. R. David, P. A. Claxton, F. Gonzalez Sanz, J. Woodhead
  • abstract, full paper

1988

MOVPE grown MQW pin diodes for electro-optic modulators and photodiodes with enhanced electron ionisation coefficient

  • Journal of Crystal Growth
  • Volume: 93, Issue: 1-4, Pages: 877-884, November-December 1988
  • J. S. Roberts, M. A. Pate, P. Mistry, J. P. R. David, R. B. FranksM. Whitehead, G. Parry
  • abstract

Disordering of Ga0.47In0.53As/InP multiple quantum well layers by sulphur diffusion

  • Electronics Letters
  • Volume: 24, Issue: 19, Pages: 1217-1218, September 1988
  • I.J. Pape, P. li KAM WA, J.P.R. David, P.A. Claxton, P.N. Robson
  • abstract

Diffusion-induced disordering of Ga0.47In0.53As/InP multiple quantum wells with zinc

  • Electronics Letters
  • Volume: 24, Issue: 15, Pages: 910-911, July 1988
  • I.J. Pape, P. LI KAM Wa, J.P.R. David, P.A. Claxton, P.N. Robson, D. Sykes
  • abstract

GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

  • Electronics Letters
  • Volume: 24, Issue: 14, Pages: 896-898, July 1988
  • D.A. Roberts, J.P.R. David, G. Hill, P.A. Houston, M.A. Pate, J.S. Roberts, P.N. Robson
  • abstract

On the band gap of InGaAs/GaAs strained quantum wells

  • Semiconductor Science and Technology
  • Volume: 3, Issue: 6, Pages: 601-604, June 1988
  • J. Woodhead, F. Gonzalez Sanz, P. A. Claxton, J. P. R. David
  • abstract

All-optical switching between modes of a GaAs/GaAlAs multiple quantum well waveguide

  • Applied Physics Letters
  • Volume: 52, Issue: 24, Pages: 2013-2014, June 1988
  • P. Li Kam Wa, P. N. Robson, J. S. Roberts, M. A. Pate, J. P. R. David
  • abstract, full paper

1987

Quantum confined Stark shifts in MOVPE-grown GaAs-AlGaAs multiple quantum wells

  • Electronics Letters
  • Volume: 23, Issue: 20, Pages: 1048-1050, September 1987
  • M. Whitehead, G. Parry, J.S. Roberts, P. Mistry, P. Li Kam Wa, J.P.R. David
  • abstract

Growth and characterisation of quantum wells and selectively doped heterostructures of InP/Ga0.47In0.53As grown by solid source MBE

  • Journal of Crystal Growth
  • Volume: 81, Issue: 1-4, Pages: 288-295, February 1987
  • P. A. Claxton, J. S. Roberts, J. P. R. David, C. M. Sotomayor-Torres, M. S. Skolnick, P. R. Tapster and K. J. Nash
  • abstract

1986

All-optical switching effects in a passive GaAs/GaAlAs multiple-quantum-well waveguide resonator

  • Electronics Letters
  • Volume: 22, Issue: 21, Pages: 1129-1130, October 1986
  • P. Li Kam Wa, P.N. Robson, J.P.R. David, G. Hill, P. Mistry, M.A. Pate, J.S. Roberts
  • abstract

Improved molecular beam epitaxial growth of InP using solid sources

  • Electronics Letters
  • Volume: 22, Issue: 10, Pages: 506-507, May 1986
  • J.S. Roberts, P.A. Claxton, J.P.R. David, J.H. Marsh
  • abstract

1985

Recent data review from EMIS. lonisation coefficient in GaAs, doping dependence

  • Solid-State and Electron Devices, IEE Proceedings I
  • Volume: 132, Issue: 1, Pages: 47-48, 1985
  • J.P.R. David
  • abstract

1982

Gate-drain avalanche breakdown in GaAs power MESFET's