Gallium Arsenide Ionisation CoefficientsThe figure shows the impact ionization coefficients for the IIIV binary semiconductor material, Gallium Arsenide (GaAs), as a function of inverse electric field at room temperature. These ionization coefficients were obtained from photomultiplication measurements undertaken on a range of PIN and NIP diodes of different avalanching widths. The electron (hole) ionization coefficients, α (β) plotted in the diagram above can be expressed as $$\alpha(\beta)=A\exp{\bigg[\left({\frac{B}{F}}\right)^c\bigg]}$$ where F is electric field strength. The constants A, B and c are tabulated as below.
α(β) can be can be used in simple analytical expressions to determine the avalanche multiplication (or gain) and the breakdown voltage. In thin avalanching structures, α(β) overestimate the multiplication as they ignore "deadspace" effects. They also cannot accurately predict the excess noise due to the impact ionization process. Models to predict the multiplication and excess noise in thin avalanching structure require knowledge of enabled ionization coefficients, α*(β*). α*(β*) can be approximated from α(β) using^{1}
$$\frac{1}{\alpha^*}=\frac{1}{\alpha}\frac{2E_{the}}{F}$$
$$\frac{1}{\beta^*}=\frac{1}{\beta}\frac{2E_{thh}}{F}$$
The above data is from Cheong et. al.^{1} Some other authors who have published GaAs ionisation coefficients are Plimmer et. al.^{2} References
